Discrete Semiconductor Products

RJK0854DPB-00#J5

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MOSFETS JET SERIES MOSFET, 80V, LFPAK, PB-F, HF

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Discrete Semiconductor Products

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MOSFETS JET SERIES MOSFET, 80V, LFPAK, PB-F, HF

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0854DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	55 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 80V 25A 13mohm LFPAK56

Part	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
Renesas Electronics Corporation RJK0854DPB-00#J5	20 V	MOSFET (Metal Oxide)	10 V	80 V	150 °C	13 mOhm	LFPAK	N-Channel	SC-100 SOT-669	Surface Mount	27 nC	25 A	2000 pF	55 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources