Discrete Semiconductor Products

SI1433DH-T1-E3

Obsolete

MOSFET P-CH 30V 1.9A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 1.9A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1433DH-T1-E3

Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max) [Max]	950 mW
Rds On (Max) @ Id, Vgs [Max]	150 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology
Vishay General Semiconductor - Diodes Division SI1433DH-T1-GE3	P-Channel	20 V	950 mW	30 V	3 V	6-TSSOP SC-88 SOT-363	150 mOhm	1.9 A	5 nC	Surface Mount	SC-70-6	-55 °C	150 °C	4.5 V 10 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI1433DH-T1-E3	P-Channel	20 V	950 mW	30 V	3 V	6-TSSOP SC-88 SOT-363	150 mOhm	1.9 A	5 nC	Surface Mount	SC-70-6	-55 °C	150 °C	4.5 V 10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 1.9A (Ta) 950mW (Ta) Surface Mount SC-70-6

Technical documentation and resources

No documents available