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TO-220-3
Discrete Semiconductor Products

IPP100N08N3GHKSA1

Obsolete
INFINEON

MOSFET N-CH 80V 70A TO220-3

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TO-220-3
Discrete Semiconductor Products

IPP100N08N3GHKSA1

Obsolete
INFINEON

MOSFET N-CH 80V 70A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP100N08N3GHKSA1
Current - Continuous Drain (Id) @ 25°C70 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds2410 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)100 W
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.69

Description

General part information

IPP100N Series

N-Channel 80 V 70A (Tc) 100W (Tc) Through Hole PG-TO220-3

Documents

Technical documentation and resources