Discrete Semiconductor Products

IPP80R750P7XKSA1

LTB

MOSFET N-CH 800V 7A TO220-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 800V 7A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP80R750P7XKSA1

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	460 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	51 W
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
INFINEON IPP80R750P7XKSA1	3.5 V	Through Hole	10 V	MOSFET (Metal Oxide)	20 V	51 W	800 V	PG-TO220-3	150 °C	-55 °C	460 pF	7 A	N-Channel	TO-220-3	17 nC	750 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 7A (Tc) 51W (Tc) Through Hole PG-TO220-3

Technical documentation and resources