Specification	PXN2R9-100RSJ

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4892 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	181 W
Rds On (Max) @ Id, Vgs	2.9 mOhm
Supplier Device Package	MLPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

PXN2R9-100RS Series

N-channel 100 V, 2.9 mOhm, standard level Trench MOSFET in MLPAK56

Part	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PXN2R9-100RSJ	20 V	8-PowerTDFN	100 V	Surface Mount	4 V	180 A	N-Channel	4892 pF	MOSFET (Metal Oxide)	MLPAK56	181 W	74 nC	2.9 mOhm	150 °C	-55 °C	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	76	$ 3.58

General part information

General purpose MOSFET for standard applications, 180 A, standard level N-channel enhancement mode Power MOSFET in MLPAK56 package.

Technical documentation and resources