
IDM02G120C5XTMA1
ActiveSILICON CARBIDE SCHOTTKY DIODE, THINQ SERIES, SINGLE, 1.2 KV, 14 A, 14 NC, TO-252 (DPAK)
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IDM02G120C5XTMA1
ActiveSILICON CARBIDE SCHOTTKY DIODE, THINQ SERIES, SINGLE, 1.2 KV, 14 A, 14 NC, TO-252 (DPAK)
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Technical Specifications
Parameters and characteristics for this part
| Specification | IDM02G120C5XTMA1 |
|---|---|
| Capacitance @ Vr, F | 182 pF |
| Current - Average Rectified (Io) | 2 A |
| Current - Reverse Leakage @ Vr | 18 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | PG-TO252-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IDM02G120 Series
TheCoolSiC™ Schottky diodegeneration 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Documents
Technical documentation and resources