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BSR33-QX
Discrete Semiconductor Products

BSR33-QX

Active
Nexperia USA Inc.

TRANS GP BJT PNP 80V 1A 1350MW 4-PIN(3+TAB) SOT-89 AUTOMOTIVE AEC-Q101

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BSR33-QX
Discrete Semiconductor Products

BSR33-QX

Active
Nexperia USA Inc.

TRANS GP BJT PNP 80V 1A 1350MW 4-PIN(3+TAB) SOT-89 AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

SpecificationBSR33-QX
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.35 W
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.23

Description

General part information

BSR33-Q Series

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package.