Discrete Semiconductor Products

RQJ0303PGDQA#H6

Obsolete

MOSFET P-CH 30V 3.3A 3MPAK

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 3.3A 3MPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RQJ0303PGDQA#H6

Current - Continuous Drain (Id) @ 25°C	3.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs	68 mOhm
Supplier Device Package	3-MPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RQJ0303PGDQA#H6	Surface Mount	4.5 V 10 V	30 V	3-MPAK	3.3 A	P-Channel	12 nC	150 °C	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	625 pF	-20 V	10 V	68 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 3.3A (Ta) 800mW (Ta) Surface Mount 3-MPAK

Technical documentation and resources