Discrete Semiconductor Products

SI3457CDV-T1-GE3

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MOSFET P-CH 30V 5.1A 6TSOP

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Discrete Semiconductor Products

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MOSFET P-CH 30V 5.1A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3457CDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	2 W, 3 W
Rds On (Max) @ Id, Vgs	74 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SI3457CDV-T1-GE3	SOT-23-6 Thin TSOT-23-6	6-TSOP	30 V	Surface Mount	5.1 A	3 V	P-Channel	20 V	450 pF	4.5 V 10 V	2 W 3 W	-55 °C	150 °C	MOSFET (Metal Oxide)	74 mOhm
Vishay General Semiconductor - Diodes Division SI3457CDV-T1-E3	SOT-23-6 Thin TSOT-23-6	6-TSOP	30 V	Surface Mount	5.1 A	3 V	P-Channel	20 V	450 pF	4.5 V 10 V		-55 °C	150 °C	MOSFET (Metal Oxide)	74 mOhm	3 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP

Technical documentation and resources