Discrete Semiconductor Products

VS-1KAB10E

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BRIDGE RECT 1P 100V 1.2A D-38

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Discrete Semiconductor Products

Active

BRIDGE RECT 1P 100V 1.2A D-38

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1KAB10E

Current - Average Rectified (Io)	1.2 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-Square, D-38
Supplier Device Package	D-38
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max) [Max]	100 V

Part	Technology	Mounting Type	Supplier Device Package	Diode Type	Voltage - Peak Reverse (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-1KAB10E	Standard	Through Hole	D-38	Single Phase	100 V	150 °C	-55 °C	1.2 A	4-Square D-38	1.1 V	10 µA

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General part information

Bridge Rectifier Single Phase Standard 100 V Through Hole D-38

Technical documentation and resources