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SSM3J133TU - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.5 A, 0.0298 Ω@4.5V, SOT-323F(UFM)
Discrete Semiconductor Products

SSM3K341TU,LF

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-323F(UFM)

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SSM3J133TU - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.5 A, 0.0298 Ω@4.5V, SOT-323F(UFM)
Discrete Semiconductor Products

SSM3K341TU,LF

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-323F(UFM)

Technical Specifications

Parameters and characteristics for this part

SpecificationSSM3K341TU,LF
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.3 nC
Input Capacitance (Ciss) (Max) @ Vds550 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Power Dissipation (Max)1.8 W
Rds On (Max) @ Id, Vgs36 mOhm
Supplier Device PackageUFM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

SSM3K341TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-323F(UFM)

PartPower Dissipation (Max)Mounting TypeDrive Voltage (Max Rds On, Min Rds On) [Max]Drive Voltage (Max Rds On, Min Rds On) [Min]Rds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ VdsDrain to Source Voltage (Vdss)Supplier Device PackageCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdTechnologyVgs (Max)FET TypeGate Charge (Qg) (Max) @ VgsOperating TemperatureGradeQualification
SSM3J133TU - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.5 A, 0.0298 Ω@4.5V, SOT-323F(UFM)
Toshiba Semiconductor and Storage
1.8 W
Surface Mount
4 V
10 V
36 mOhm
550 pF
60 V
UFM
6 A
2.5 V
MOSFET (Metal Oxide)
20 V
N-Channel
9.3 nC
175 °C
UFM
Toshiba Semiconductor and Storage
1 W
Surface Mount
4 V
10 V
36 mOhm
550 pF
60 V
UFM
6 A
2.5 V
MOSFET (Metal Oxide)
20 V
N-Channel
9.3 nC
175 °C
Automotive
AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 36075$ 0.64

Description

General part information

SSM3K341TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-323F(UFM)