Discrete Semiconductor Products
IKW08N120CS7XKSA1
ActiveINFINEON
THE IKW08N120CS7 IS A 1200 V, 8 A IGBT7 S7 WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE
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Discrete Semiconductor Products
IKW08N120CS7XKSA1
ActiveINFINEON
THE IKW08N120CS7 IS A 1200 V, 8 A IGBT7 S7 WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | IKW08N120CS7XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 21 A |
| Gate Charge | 52 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 106 W |
| Reverse Recovery Time (trr) | 130 ns |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy | 370 µJ, 400 µJ |
| Td (on/off) @ 25°C [custom] | 160 ns |
| Td (on/off) @ 25°C [custom] | 17 ns |
| Test Condition | 20 Ohm, 600 V, 8 A, 15 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IKW08N Series
Hard-switching 1200 V, 8 ATRENCHSTOP™ IGBT7S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsatto achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses.