Discrete Semiconductor Products

2N5088 TRA TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 35VCBO 30VCEO 4.5VEBO 50MA 625MA

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT NPN 35VCBO 30VCEO 4.5VEBO 50MA 625MA

Technical Specifications

Parameters and characteristics for this part

Specification	2N5088 TRA TIN/LEAD

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	350
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Transistor Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
Central Semiconductor Corp 2N5088 TRA TIN/LEAD	150 °C	-65 °C	50 nA	Through Hole	50 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	625 mW	350	50 MHz	TO-92	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.17
Mouser	N/A	6000	$ 0.17
		10000	$ 0.16

General part information

BIPOLAR TRANSISTORS - BJT NPN 35VCBO 30VCEO 4.5VEBO 50MA 625MA

Technical documentation and resources

No documents available