Specification	NVBLS0D7N04M8TXG

Current - Continuous Drain (Id) @ 25°C	240 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	188 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	12000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	357 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	0.75 mOhm
Supplier Device Package	8-HPSOF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NVBLS0D7N04M8 Series

Power MOSFET, 40 V, 300 A, 0.57 mΩ, Single N-Channel

Part	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Qualification	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
ON Semiconductor NVBLS0D7N04M8TXG	-55 °C	175 ░C	Automotive	12000 pF	N-Channel	8-HPSOF	357 W	10 V	20 V	Surface Mount	188 nC	4 V	MOSFET (Metal Oxide)	AEC-Q101	8-PowerSFN	240 A	40 V	0.75 mOhm
ON Semiconductor NVBLS0D5N04CTXG	-55 °C	175 ░C	Automotive	12600 pF	N-Channel	8-HPSOF			-16 V 20 V	Surface Mount	185 nC	4 V	MOSFET (Metal Oxide)	AEC-Q101	8-PowerSFN	65 A 300 A	40 V		0.57 mOhm	4.3 W 198.4 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVBLS0D7N04M8 Series

Power MOSFET, 40 V, 300 A, 0.57 mΩ, Single N-Channel.TO-LL package for high power density and improved thermal performance.AEC-Q101 qualified and PPAP capable suitable for automotive applications.