Discrete Semiconductor Products

RN1108(T5L,F,T)

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TRANS PREBIAS NPN 50V 0.1A SSM

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Discrete Semiconductor Products

Active

TRANS PREBIAS NPN 50V 0.1A SSM

Technical Specifications

Parameters and characteristics for this part

Specification	RN1108(T5L,F,T)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-416, SC-75
Power - Max [Max]	100 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	SSM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-416(SSM)

Part	Package / Case	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Mounting Type	Power - Max [Max]	Supplier Device Package	Resistor - Emitter Base (R2)	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage RN1108(T5L,F,T)	SC-75 SOT-416	250 MHz	80	NPN - Pre-Biased	22 kOhms	300 mV	500 nA	Surface Mount	100 mW	SSM	47 kOhms	50 V	100 mA
Toshiba Semiconductor and Storage RN1108,LF(CT	SC-75 SOT-416	250 MHz	80	NPN - Pre-Biased	22 kOhms	300 mV	500 nA	Surface Mount	100 mW	SSM	47 kOhms	50 V	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-416(SSM)

Technical documentation and resources