Discrete Semiconductor Products

SIC10120PTA-BP

Obsolete

DIODE SIL CARB 1.2KV 10A TO247AD

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.2KV 10A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SIC10120PTA-BP

Capacitance @ Vr, F	750 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Speed	500 mA
Supplier Device Package	TO-247AD
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Capacitance @ Vr, F	Technology	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Reverse Recovery Time (trr)
MCC (Micro Commercial Components) SIC10120PTA-BP	2 µA	10 A	1.2 kV	500 mA	750 pF	SiC (Silicon Carbide) Schottky	1.8 V	TO-247AD	TO-247-2	175 ░C	-55 °C	Through Hole
MCC (Micro Commercial Components) SIC10120PTA-BP	2 µA	10 A	1.2 kV	500 mA	750 pF	SiC (Silicon Carbide) Schottky	1.8 V	TO-247AD	TO-247-2	175 ░C	-55 °C	Through Hole	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 10A Through Hole TO-247AD

Technical documentation and resources