Discrete Semiconductor Products

SI6404DQ-T1-GE3

Obsolete

MOSFET N-CH 30V 8.6A 8TSSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 8.6A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6404DQ-T1-GE3

Current - Continuous Drain (Id) (Ta)	8.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	48 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Power Dissipation (Max)	1.08 W
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	600 mV

Part	Technology	Package Name	Vgs(th) (Max)	Mounting Type	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package Length	Package Width	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI6404DQ-T1-GE3	MOSFET (Metal Oxide)	8-TSSOP	600 mV	Surface Mount	N-Channel	10 V	2.5 V	12 V	9 mOhm	30 V	48 nC	0.173 in	4.4 mm	1.08 W	-55 °C	150 °C	8.6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.13	30d+

3D models and CAD resources for this part

General part information

N-Channel 30 V 8.6A (Ta) 1.08W (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available