Discrete Semiconductor Products
IDV30E65D2XKSA1
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THE IDV30E65D2 IS A 650 V SILICON POWER DIODE IN TO-220 FULLPAK PACKAGE
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Discrete Semiconductor Products
IDV30E65D2XKSA1
ActiveINFINEON
THE IDV30E65D2 IS A 650 V SILICON POWER DIODE IN TO-220 FULLPAK PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IDV30E65D2XKSA1 |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage @ Vr | 40 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-2 Full Pack |
| Reverse Recovery Time (trr) | 42 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | PG-TO220-2 Full Pack |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IDV30E65 Series
Rapid 2switching 650 V, 30 A emitter controlledpower silicon diodein a TO-220 FullPAK package is designed for applications switching between 40 kHz and 100 kHz.
Documents
Technical documentation and resources
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