Specification	SSM6J808R,LF

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1020 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	1.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2 V

SSM6J808R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -40 V, -7 A, 0.035 Ω@10V, TSOP6F

Part	Grade	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Vgs (Max) [Min]	Technology	Package / Case	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM6J808R,LF	Automotive	4 V	10 V	150 °C	Surface Mount	24.2 nC	AEC-Q101	P-Channel	1.5 W	1020 pF	6-TSOP-F	35 mOhm	2 V	7 A	10 V	-20 V	MOSFET (Metal Oxide)	6-SMD Flat Leads	40 V
Toshiba Semiconductor and Storage SSM6J808R,LXHF	Automotive	4 V	10 V	150 °C	Surface Mount	24.2 nC	AEC-Q101	P-Channel	1.5 W	1020 pF	6-TSOP-F	35 mOhm	2 V	7 A	10 V	-20 V	MOSFET (Metal Oxide)	6-SMD Flat Leads	40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	10094	$ 0.92

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -40 V, -7 A, 0.035 Ω@10V, TSOP6F

Technical documentation and resources