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TO-3PFM

Discrete Semiconductor Products

RGW50TK65DGVC11

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Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 18A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT

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Search across all available documentation for this part.

DocumentsPCB Layout Thermal Design Guide About Flammability of Materials +37

TO-3PFM

Discrete Semiconductor Products

RGW50TK65DGVC11

Active

Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 18A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT

Deep-Dive with AI

DocumentsPCB Layout Thermal Design Guide About Flammability of Materials +37

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGW50TK65DGVC11

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	73 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-3PFM, SC-93-3
Power - Max [Max]	67 W
Reverse Recovery Time (trr)	92 ns
Supplier Device Package	TO-3PFM
Switching Energy	390 µJ, 430 µJ
Td (on/off) @ 25°C [custom]	102 ns
Td (on/off) @ 25°C [custom]	35 ns
Test Condition	25 A, 400 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	450	$ 3.64
	Tube	1	$ 3.66
		30	$ 2.00
		120	$ 1.63
Newark	Each	1	$ 3.79
		10	$ 3.33
		25	$ 2.86

Description

General part information

RGW50TK65D Series

RGW50TK65D is a high speed switching IGBT, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.

Documents

Technical documentation and resources

PCB Layout Thermal Design Guide

About Flammability of Materials

Environmental Data

Measurement Method and Usage of Thermal Resistance RthJC

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Basics of Thermal Resistance and Heat Dissipation

Notes for Temperature Measurement Using Thermocouples

RGW50TK65D Data Sheet

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Method for Monitoring Switching Waveform

Schematic Design & Verification

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Notes for Calculating Power Consumption:Static Operation

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Part Explanation

Application Note

What is a Thermal Model? (IGBT)

How to Use LTspice® Models

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

θ<sub>JC</sub> and Ψ<sub>JT</sub>

What Is Thermal Design

Precautions for Thermal Resistance of Insulation Sheet

Anti-Whisker formation

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Types and Features of Transistors

Application Note

Two-Resistor Model for Thermal Simulation

Compliance of the ELV directive

Environmental Data

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

θ<sub>JA</sub> and Ψ<sub>JT</sub>

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Estimation of switching losses in IGBTs operating with resistive load

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

About Export Administration Regulations (EAR)

Export Information

Moisture Sensitivity Level

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Judgment Criteria of Thermal Evaluation

Package Dimensions

Package Information

4 Steps for Successful Thermal Designing of Power Devices

RGW50TK65D Series

High-Speed Fast Switching Type, 650V 18A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Part	Switching Energy	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Package / Case	Test Condition	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Gate Charge	Supplier Device Package	Power - Max [Max]
Rohm Semiconductor RGW50TK65DGVC11	390 µJ 430 µJ	92 ns	1.9 V	Trench Field Stop	175 °C	-40 °C	102 ns	35 ns	SC-93-3 TO-3PFM	10 Ohm 15 V 25 A 400 V	100 A	30 A	650 V	Through Hole	73 nC	TO-3PFM	67 W