Discrete Semiconductor Products

RJK1055DPB-00#J5

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NCH POWER MOSFET 100V 23A 17MOHM LFPAK56

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Discrete Semiconductor Products

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NCH POWER MOSFET 100V 23A 17MOHM LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1055DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2550 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 100V 23A 17mohm LFPAK56

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Vgs (Max)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation RJK1055DPB-00#J5	23 A	17 mOhm	60 W	35 nC	LFPAK	Surface Mount	MOSFET (Metal Oxide)	10 V	100 V	N-Channel	SC-100 SOT-669	20 V	150 °C	2550 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4	$ 2.71

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources