Discrete Semiconductor Products

CSD88537NDT

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60-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL SO-8, 15 MOHM

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Discrete Semiconductor Products

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60-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL SO-8, 15 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD88537NDT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.1 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.6 V

60-V, N channel NexFET™ power MOSFET, dual SO-8, 15 mOhm

Part	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD88537NDT	MOSFET (Metal Oxide)	15 mOhm	1400 pF	8-SOIC	3.9 mm	0.154 in	8-SOIC	Surface Mount	-55 °C	150 °C	3.6 V	60 V	2.1 W	18 nC	2 N-Channel (Dual)	15 A
Texas Instruments CSD88537ND	MOSFET (Metal Oxide)	15 mOhm	1400 pF	8-SOIC	3.9 mm	0.154 in	8-SOIC	Surface Mount	-55 °C	150 °C	3.6 V	60 V	2.1 W	18 nC	2 N-Channel (Dual)	15 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications.

Technical documentation and resources