Discrete Semiconductor Products

SIB412DK-T1-GE3

Obsolete

MOSFET N-CH 20V 9A PPAK SC75-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 9A PPAK SC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB412DK-T1-GE3

Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	10.16 nC, 10.16 nC
Input Capacitance (Ciss) (Max)	535 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-75-6
Package Name	PowerPAK® SC-75-6
Power Dissipation (Max)	2.4 W, 13 W
Rds On (Max)	34 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Current - Continuous Drain (Id) (Tc)	Package / Case	Package Name	Power Dissipation (Max)	Vgs(th) (Max)	Mounting Type	Rds On (Max)	FET Type	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)
Vishay Dale SIB412DK-T1-GE3	9 A	PowerPAK® SC-75-6	PowerPAK® SC-75-6	2.4 W 13 W	1 V	Surface Mount	34 mOhm	N-Channel	MOSFET (Metal Oxide)	4.5 V	1.8 V	20 V	8 V	10.16 nC 10.16 nC	-55 °C	150 °C	535 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.33	1m+

3D models and CAD resources for this part

General part information

N-Channel 20 V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources

No documents available