Specification	NTLJS3A18PZTWG

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	2240 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	6-WDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NTLJS3A18PZ Series

Power MOSFET -20V -8.2A 18 mOhm Single P-Channel WDFN6 with ESD Protection

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTLJS3A18PZTWG	28 nC	6-WDFN (2x2)	MOSFET (Metal Oxide)	-55 °C	150 °C	5 A	18 mOhm	20 V	Surface Mount	1 V	8 V	P-Channel	1.5 V 4.5 V	700 mW	2240 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET, -20 V, -8.2 A, Single P-Channel, 2.0x2.0x0.8 mm WDFN Package

Technical documentation and resources