
Discrete Semiconductor Products
IPB030N08N3GATMA1
ActiveINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 3 MOHM;
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Discrete Semiconductor Products
IPB030N08N3GATMA1
ActiveINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 3 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB030N08N3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 160 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 8110 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Power Dissipation (Max) [Max] | 214 W |
| Rds On (Max) @ Id, Vgs | 3 mOhm |
| Supplier Device Package | PG-TO263-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB030 Series
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Documents
Technical documentation and resources