
Discrete Semiconductor Products
BCP52
ObsoleteON Semiconductor
TRANS GP BJT PNP 60V 1.2A 1500MW 4-PIN(3+TAB) SOT-223 T/R
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Discrete Semiconductor Products
BCP52
ObsoleteON Semiconductor
TRANS GP BJT PNP 60V 1.2A 1500MW 4-PIN(3+TAB) SOT-223 T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BCP52 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1.2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 1.5 W |
| Supplier Device Package | SOT-223-4 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
BCP52 Series
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78.
Documents
Technical documentation and resources