Discrete Semiconductor Products

IPB05N03LB

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MOSFET N-CH 30V 80A TO263-3

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Discrete Semiconductor Products

Unknown

MOSFET N-CH 30V 80A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPB05N03LB

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	3209 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type
INFINEON IPB05N03LB	3209 pF	25 nC	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	5 mOhm	N-Channel	PG-TO263-3-2	94 W	4.5 V 10 V	MOSFET (Metal Oxide)	2 V	30 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources