Discrete Semiconductor Products
BUK78150-55A/CUX
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS STANDARD LEVEL FET
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Discrete Semiconductor Products
BUK78150-55A/CUX
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS STANDARD LEVEL FET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK78150-55A/CUX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 150 mOhm |
| Supplier Device Package | SOT-223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 53423 | $ 0.87 | |
Description
General part information
BUK78150-55A Series
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Documents
Technical documentation and resources