Discrete Semiconductor Products

IRL40S212

Obsolete

MOSFET N-CH 40V 195A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 195A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRL40S212

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	137 nC
Input Capacitance (Ciss) (Max) @ Vds	8320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	231 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
INFINEON IRL40S212	231 W	N-Channel	1.9 mOhm	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	8320 pF	20 V	175 °C	-55 °C	MOSFET (Metal Oxide)	Surface Mount	137 nC	40 V	195 A	2.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 40 V 195A (Tc) 231W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources