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IMS-2
Discrete Semiconductor Products

CPV362M4F

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Vishay General Semiconductor - Diodes Division

IGBT MODULE 600V 8.8A 23W IMS-2

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IMS-2
Discrete Semiconductor Products

CPV362M4F

Active
Vishay General Semiconductor - Diodes Division

IGBT MODULE 600V 8.8A 23W IMS-2

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationCPV362M4F
ConfigurationThree Phase Inverter
Current - Collector (Ic) (Max) [Max]8.8 A
Current - Collector Cutoff (Max) [Max]250 µA
InputStandard
Input Capacitance (Cies) @ Vce340 pF
Mounting TypeThrough Hole
NTC ThermistorFalse
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseIMS-2, 19-SIP (13 Leads)
Power - Max [Max]23 W
Supplier Device PackageIMS-2
Vce(on) (Max) @ Vge, Ic1.66 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

CPV362 Series

IGBT Module Three Phase Inverter 600 V 8.8 A 23 W Through Hole IMS-2

Documents

Technical documentation and resources

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