Discrete Semiconductor Products

V8P8-M3/87A

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DIODE SCHOTTKY 80V 4A TO277A

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Discrete Semiconductor Products

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DIODE SCHOTTKY 80V 4A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	V8P8-M3/87A

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	700 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-PowerDFN, TO-277
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	660 mV

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Package / Case	Technology	Current - Average Rectified (Io)	Grade	Qualification
Vishay General Semiconductor - Diodes Division V8P8-M3/87A	700 µA	660 mV	150 °C	-40 °C	Surface Mount	80 V	200 mA 500 ns	TO-277A (SMPC)	3-PowerDFN TO-277	Schottky	4 A
Vishay General Semiconductor - Diodes Division V8P8HM3_A/H	700 µA	660 mV	150 °C	-40 °C	Surface Mount	80 V	200 mA 500 ns	TO-277A (SMPC)	3-PowerDFN TO-277	Schottky	8 A	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 80 V 4A Surface Mount TO-277A (SMPC)

Technical documentation and resources