Discrete Semiconductor Products
TK4R3E06PL,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0043 Ω@10V, TO-220, U-MOSⅨ-H
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Discrete Semiconductor Products
TK4R3E06PL,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0043 Ω@10V, TO-220, U-MOSⅨ-H
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TK4R3E06PL,S1X |
|---|---|
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3280 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 87 W |
| Rds On (Max) @ Id, Vgs | 7.2 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 50 | $ 2.22 | |
Description
General part information
TK4R3E06PL Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0043 Ω@10V, TO-220, U-MOSⅨ-H
Documents
Technical documentation and resources