Discrete Semiconductor Products

MSJPF08N90A-BP

Active

N-CHANNEL MOSFET,TO-220F

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

N-CHANNEL MOSFET,TO-220F

Technical Specifications

Parameters and characteristics for this part

Specification	MSJPF08N90A-BP

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	474 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	113 W
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)
MCC (Micro Commercial Components) MSJPF08N90A-BP	13.6 nC	TO-220-3 Full Pack	MOSFET (Metal Oxide)	474 pF	Through Hole	N-Channel	4 V	900 V	1.3 Ohm	8 A	150 °C	-55 °C	113 W	10 V	TO-220F	30 V
MCC (Micro Commercial Components) MSJPF08N90A-BP	13.6 nC	TO-220-3 Full Pack	MOSFET (Metal Oxide)	474 pF	Through Hole	N-Channel	4 V	900 V	1.3 Ohm	8 A	150 °C	-55 °C	113 W	10 V	TO-220F	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 8A (Tc) 113W (Tc) Through Hole TO-220F

Technical documentation and resources