Discrete Semiconductor Products

SICU0860P-TP

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DIODE SIL CARBIDE 650V 8A TO252

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 650V 8A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	SICU0860P-TP

Capacitance @ Vr, F	346 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	36 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-252 (DPAK)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

Part	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Speed
MCC (Micro Commercial Components) SICU0860P-TP	TO-252 (DPAK)	SiC (Silicon Carbide) Schottky	36 µA	175 ░C	-55 °C	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	346 pF	650 V	0 ns	8 A	1.6 V	500 mA
MCC (Micro Commercial Components) SICU0860P-TP	TO-252 (DPAK)	SiC (Silicon Carbide) Schottky	36 µA	175 ░C	-55 °C	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	346 pF	650 V	0 ns	8 A	1.6 V	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 8A Surface Mount TO-252 (DPAK)

Technical documentation and resources