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LSIC2SD120E30CCA
Discrete Semiconductor Products

LSIC2SD120E30CCA

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LITTELFUSE

SIC SCHOTTKY DIODE 1200V 2X15A TO247-3L/ TUBE

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LSIC2SD120E30CCA
Discrete Semiconductor Products

LSIC2SD120E30CCA

Active
LITTELFUSE

SIC SCHOTTKY DIODE 1200V 2X15A TO247-3L/ TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationLSIC2SD120E30CCA
Current - Average Rectified (Io) (per Diode)45 A
Current - Reverse Leakage @ Vr100 µA
Diode Configuration1 Pair Common Cathode
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-247-3
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageTO-247
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If15 A
Voltage - Forward (Vf) (Max) @ If [Max]1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 8.161m+
NewarkEach 250$ 18.671m+
TMEN/A 1$ 32.83<1d
5$ 29.48
30$ 26.12
120$ 23.47

Description

General part information

LSIC2SD120E30CCA Series

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Documents

Technical documentation and resources