Discrete Semiconductor Products

VS-1N1186R

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DIODE GEN PURP 200V 35A DO203AB

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 35A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N1186R

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	10 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-5, DO-203AB
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-203AB
Supplier Device Package	DO-5
Technology	Reverse Polarity, Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed [Min]	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division VS-1N1186RA	200 mA 500 ns	40 A	200 V	200 C	-65 C	Reverse Polarity Standard	2.5 mA	DO-203AB	DO-5	Chassis Stud Mount	1.3 V	DO-203AB DO-5 Stud
Vishay General Semiconductor - Diodes Division VS-1N1186R	200 mA 500 ns	35 A	200 V	190 °C	-65 C	Reverse Polarity Standard	10 mA	DO-203AB	DO-5	Chassis Stud Mount		DO-203AB DO-5 Stud	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 200 V 35A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources