Discrete Semiconductor Products

IPA65R420CFDXKSA2

LTB

TRANS MOSFET N-CH 650V 8.7A 3-PIN(3+TAB) TO-220FP TUBE

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Discrete Semiconductor Products

LTB

TRANS MOSFET N-CH 650V 8.7A 3-PIN(3+TAB) TO-220FP TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPA65R420CFDXKSA2

Current - Continuous Drain (Id) @ 25°C	8.7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	31.5 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	31.2 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
INFINEON IPA65R420CFDXKSA2	650 V	PG-TO220-FP	420 mOhm	MOSFET (Metal Oxide)	4.5 V	10 V	150 °C	-55 °C	20 V	Through Hole	N-Channel	870 pF	TO-220-3 Full Pack	31.5 nC	8.7 A	31.2 W
INFINEON IPA65R420CFDXKSA1	650 V	PG-TO220-3-111	420 mOhm	MOSFET (Metal Oxide)	4.5 V	10 V	150 °C	-55 °C	20 V	Through Hole	N-Channel	870 pF	TO-220-3 Full Pack	32 nC	8.7 A	31.2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 8.7A (Tc) 31.2W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources