Discrete Semiconductor Products

IRFS7530TRL7PP

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POWER MOSFET, N CHANNEL, 60 V, 240 A, 0.00115 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 60 V, 240 A, 0.00115 OHM, TO-263 (D2PAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS7530TRL7PP

Current - Continuous Drain (Id) @ 25°C	240 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	354 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	12960 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)	375 W
Rds On (Max) @ Id, Vgs	1.4 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
INFINEON IRFS7530TRL7PP	375 W	354 nC	12960 pF	Surface Mount	N-Channel	PG-TO263-7	6 V 10 V	20 V	D2PAK (6 Leads + Tab) TO-263-7	175 °C	-55 °C	MOSFET (Metal Oxide)	3.7 V	1.4 mOhm	60 V	240 A
INFINEON IRFS7530TRLPBF	375 W	411 nC	13703 pF	Surface Mount	N-Channel	PG-TO263-2	6 V 10 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C	MOSFET (Metal Oxide)	3.7 V	0.002 mOhm	60 V	195 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly