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8-PowerTDFN
Discrete Semiconductor Products

BSC0921NDIATMA1

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INFINEON

OPTIMOS™ N+N DUAL POWER MOSFET 30 V ; ASYMMETRICAL DUAL 5X6 PACKAGE; 1.5 MOHM;

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8-PowerTDFN
Discrete Semiconductor Products

BSC0921NDIATMA1

Active
INFINEON

OPTIMOS™ N+N DUAL POWER MOSFET 30 V ; ASYMMETRICAL DUAL 5X6 PACKAGE; 1.5 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC0921NDIATMA1
Configuration2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C17 A, 31 A
Drain to Source Voltage (Vdss)30 V
FET Feature4.5 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]8.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1025 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power - Max [Max]1 W
Rds On (Max) @ Id, Vgs5 mOhm
Supplier Device PackagePG-TISON-8
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.24
10$ 1.44
100$ 0.98
500$ 0.78
1000$ 0.72
2000$ 0.67
Digi-Reel® 1$ 2.24
10$ 1.44
100$ 0.98
500$ 0.78
1000$ 0.72
2000$ 0.67
N/A 12016$ 1.17
Tape & Reel (TR) 5000$ 0.64

Description

General part information

BSC0921 Series

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Documents

Technical documentation and resources