Discrete Semiconductor Products

IDW30E60FKSA1

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600 V, 30 A SINGLE EMITTER CONTROLLED SILICON POWER DIODE IN A TO-247 PACKAGE

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Discrete Semiconductor Products

Active

600 V, 30 A SINGLE EMITTER CONTROLLED SILICON POWER DIODE IN A TO-247 PACKAGE

Technical Specifications

Parameters and characteristics for this part

Specification	IDW30E60FKSA1

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	143 ns
Speed	500 ns, 200 mA
Supplier Device Package	PG-TO247-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	2 V

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Mounting Type	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed
INFINEON IDW30E60FKSA1	60 A	40 µA	143 ns	-40 °C	175 ░C	PG-TO247-3	Through Hole	Standard	TO-247-3	2 V	600 V	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The 600 V, 30 A emitter controlledsilicon power diodein a TO-247 package has been primarily designed formotor drive applicationsup to 30kHz.

Technical documentation and resources