Discrete Semiconductor Products

SIZ346DT-T1-GE3

Active

MOSFET 2N-CH 30V 17A/30A 8PWR33

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 30V 17A/30A 8PWR33

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ346DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	17 A, 30 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	5 nC
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	650 pF
Input Capacitance (Ciss) (Max) @ Vds	325 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	16.7 W
Power - Max	16 W
Rds On (Max) @ Id, Vgs	11.5 mOhm, 28.5 mOhm
Supplier Device Package	8-Power33 (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V, 2.2 V

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Configuration	Power - Max	Power - Max	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIZ346DT-T1-GE3	2.2 V 2.4 V	17 A 30 A	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual)	16.7 W	16 W	8-Power33 (3x3)	11.5 mOhm 28.5 mOhm	5 nC	9 nC	650 pF	325 pF	8-PowerWDFN	Surface Mount	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 17A (Tc), 30A (Tc) 16W, 16.7W Surface Mount 8-Power33 (3x3)

Technical documentation and resources