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SOT1205
Discrete Semiconductor Products

PHPT610035NK-QX

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Nexperia USA Inc.

NPN/NPN HIGH POWER DOUBLE BIPOLAR TRANSISTOR

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SOT1205
Discrete Semiconductor Products

PHPT610035NK-QX

Active
Nexperia USA Inc.

NPN/NPN HIGH POWER DOUBLE BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPHPT610035NK-QX
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]150
Frequency - Transition140 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSOT-1205, 8-LFPAK56
Power - Max [Max]1 W
QualificationAEC-Q101
Supplier Device PackageLFPAK56D
Transistor Type2 NPN
Vce Saturation (Max) @ Ib, Ic330 mV
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.49

Description

General part information

PHPT610035NK-Q Series

NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK-Q.