Discrete Semiconductor Products

IPW80R360P7XKSA1

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MOSFET, N-CH, 800V, 13A, TO-247

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Discrete Semiconductor Products

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MOSFET, N-CH, 800V, 13A, TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	IPW80R360P7XKSA1

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	930 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	84 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	PG-TO247-3-41
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Power Dissipation (Max) [Max]
INFINEON IPW80R360P7XKSA1	800 V	150 °C	-55 °C	10 V	13 A	Through Hole	N-Channel	930 pF	MOSFET (Metal Oxide)	30 nC	20 V	3.5 V	360 mOhm	TO-247-3	PG-TO247-3-41	84 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 13A (Tc) 84W (Tc) Through Hole PG-TO247-3-41

Technical documentation and resources