Discrete Semiconductor Products

2SD1060R-1E

Obsolete

BIPOLAR TRANSISTOR, 50V, 5A, LOW VCE(SAT), NPN TO-220-3L

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Discrete Semiconductor Products

Obsolete

BIPOLAR TRANSISTOR, 50V, 5A, LOW VCE(SAT), NPN TO-220-3L

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1060R-1E

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	1.75 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistor, 50V, 5A, Low VCE(sat), NPN TO-220-3L

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Frequency - Transition	Current - Collector (Ic) (Max)	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature
ON Semiconductor 2SD1060R-1E	50 V	1.75 W	100	TO-220-3	30 MHz	5 A	TO-220-3	Through Hole	100 µA	NPN	300 mV	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2SD1060 is a Bipolar Transistor, 50V, 5A, Low VCE(sat), NPN TO-220-3L.

Technical documentation and resources