Specification	BSC022N04LS6ATMA1

Current - Continuous Drain (Id) @ 25°C	100 A, 27 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3 W, 79 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

BSC022 Series

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON BSC022N04LS6ATMA1	2.3 V	27 A 100 A	40 V	175 °C	-55 °C	Surface Mount	MOSFET (Metal Oxide)	28 nC	3 W 79 W	20 V	2.2 mOhm	PG-TDSON-8-1	N-Channel	8-PowerTDFN	4.5 V 10 V	1900 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 27A (Ta), 100A (Tc) 3W (Ta), 79W (Tc) Surface Mount PG-TDSON-8-1

Technical documentation and resources