Discrete Semiconductor Products

PBSS4350SA_R1_00001

NRND

BIPOLAR TRANSISTORS - BJT NPN LOW VCE(SAT) TRANSISTOR

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Discrete Semiconductor Products

NRND

BIPOLAR TRANSISTORS - BJT NPN LOW VCE(SAT) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4350SA_R1_00001

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	1.25 W
Supplier Device Package	SC-59
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	370 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Package / Case	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Panjit International Inc. PBSS4350SA_R1_00001	100 nA	100 MHz	150 °C	-55 °C	NPN	370 mV	Surface Mount	SC-59 SOT-23-3 TO-236-3	SC-59	1.25 W	50 V	3 A	300

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General part information

BIPOLAR TRANSISTORS - BJT NPN LOW VCE(SAT) TRANSISTOR

Technical documentation and resources