Specification	PHPT61006PY-QX

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	170
Frequency - Transition	116 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-100, SOT-669
Power - Max [Max]	1.3 W
Qualification	AEC-Q101
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PHPT61006PY-Q Series

100 V, 6 A PNP high power bipolar transistor

Part	Power - Max [Max]	Package / Case	Grade	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Mounting Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Qualification
Nexperia USA Inc. PHPT61006PY-QX	1.3 W	SC-100 SOT-669	Automotive	1.6 V	LFPAK56 Power-SO8	100 nA	170	PNP	Surface Mount	175 °C	100 V	116 MHz	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.33

General part information

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

Technical documentation and resources