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ONSEMI ISL9V3040P3

Discrete Semiconductor Products

R6022YNX3C16

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Rohm Semiconductor

MOSFET, N-CH, 600V, 22A, TO-220AB ROHS COMPLIANT: YES

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DocumentsPrecautions When Measuring the Rear of the Package with a Thermocouple Types and Features of Transistors +41

ONSEMI ISL9V3040P3

Discrete Semiconductor Products

R6022YNX3C16

Active

Rohm Semiconductor

MOSFET, N-CH, 600V, 22A, TO-220AB ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsPrecautions When Measuring the Rear of the Package with a Thermocouple Types and Features of Transistors +41

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6022YNX3C16

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 12 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	1400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	205 W
Rds On (Max) @ Id, Vgs	165 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	995	$ 3.95
Newark	Each	1	$ 4.31
		10	$ 2.83
		25	$ 2.55
		50	$ 2.27
		100	$ 2.00
		250	$ 1.81
		500	$ 1.63

Description

General part information

R6022YNX3 Series

R6022YNX3 is a power MOSFET with low on - resistance, suitable for switching.

Documents

Technical documentation and resources

Precautions When Measuring the Rear of the Package with a Thermocouple

Types and Features of Transistors

Application Note

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Two-Resistor Model for Thermal Simulation

TO-220AB Dimension

Package Information

Condition of Soldering / Land Pattern Reference

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

TO-220AB Explanation for Marking

Package Information

TO-220AB Inner Structure

Package Information

Compliance of the RoHS directive

Environmental Data

Notes for Calculating Power Consumption:Static Operation

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

About Flammability of Materials

Environmental Data

PCB Layout Thermal Design Guide

TO-220AB Packing Information

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Anti-Whisker formation - Transistors

Package Information

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

What is a Thermal Model? (Transistor)

R6022YNX3 Data Sheet

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Report of SVHC under REACH Regulation

Environmental Data

Notes for Temperature Measurement Using Forward Voltage of PN Junction

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

List of Transistor Package Thermal Resistance

Moisture Sensitivity Level - Transistors

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

What Is Thermal Design

About Export Regulations

Export Information

Judgment Criteria of Thermal Evaluation

Part Explanation

Application Note

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

How to Use LTspice® Models

Schematic Design & Verification

TO-220AB Reliability Test Result

Manufacturing Data

Basics of Thermal Resistance and Heat Dissipation

R6022YNX3 Series

Nch 600V 22A, TO-220AB, Power MOSFET

Part	Vgs (Max)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Rohm Semiconductor R6022YNX3C16	30 V	MOSFET (Metal Oxide)	TO-220-3	1400 pF	600 V	N-Channel	150 °C	22 A	10 V 12 V	TO-220AB	Through Hole	165 mOhm	205 W