Discrete Semiconductor Products

MCU30P06Y-TP

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P-CHANNEL MOSFET, DPAK

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Discrete Semiconductor Products

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P-CHANNEL MOSFET, DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU30P06Y-TP

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	72 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Micro Commercial Components MCU30P06Y-TP	55 mOhm	P-Channel	MOSFET (Metal Oxide)	20 V	2.7 V	72 W	19.3 nC	60 V	Surface Mount	-55 °C	150 °C	30 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	1050 pF	TO-252 (DPAK)

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General part information

P-Channel 60 V 30A 72W (Tj) Surface Mount TO-252 (DPAK)

Technical documentation and resources