Discrete Semiconductor Products

SIDC24D30SIC3

Unknown

DIODE SIC 300V 10A SAWN ON FOIL

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Discrete Semiconductor Products

Unknown

DIODE SIC 300V 10A SAWN ON FOIL

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC24D30SIC3

Capacitance @ Vr, F	600 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Die
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	Sawn on foil
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Supplier Device Package	Reverse Recovery Time (trr)	Speed	Package / Case
INFINEON SIDC24D30SIC3	600 pF	200 µA	SiC (Silicon Carbide) Schottky	Surface Mount	175 ░C	-55 °C	300 V	1.7 V	10 A	Sawn on foil	0 ns	500 mA	Die

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General part information

Diode 300 V 10A Surface Mount Sawn on foil

Technical documentation and resources